Semiconductor device and semiconductor device fabrication...

Details Semiconductor device and semiconductor device fabrication... Semiconductor device and semiconductor device fabrication...

2007-01-09

2007-01-09

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S447000, C257S347000, C257S622000

Reexamination Certificate

active

10673499

ABSTRACT:
An SOI layer is formed on a substrate of a semiconductor device, and one or more elements are formed on the SOI layer. One or more grooves are formed in a substrate of the semiconductor device by removing part of the substrate. The groove is formed directly below an element for which dielectric loss caused by the substrate is assumed. Because silicon crystal constituting a dielectric is only present thinly at the groove or is completely absent therefrom, the dielectric loss of the element located above this groove is then very small. If this element is a constituent element of a high frequency circuit, the high frequency circuit thus displays high responsiveness and stability with respect to high frequency signal processing.

REFERENCES:
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5668057 (1997-09-01), Eda et al.
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6583445 (2003-06-01), Reedy et al.
patent: 09-270515 (1997-10-01), None
patent: 10-098200 (1998-04-01), None
patent: 10-135487 (1998-05-01), None
patent: 2001-308667 (2001-11-01), None

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