Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-04-22
2008-04-22
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23043, C257SE23052, C257SE23092, C257S676000, C257S666000, C257S698000, C257S690000, C257S691000, C257S693000, C257S776000, C257S775000, C361S774000, C361S748000, C361S776000, C439S075000
Reexamination Certificate
active
07361983
ABSTRACT:
In a semiconductor device (1), semiconductor elements (2) and (3) are mounted on a lead frame (5) having leads (4). The semiconductor elements (2) and (3) are connected with the leads (4) by metallic wires (6) and (7). The semiconductor device (1) also has a heat sink (8). The members (2) to (8) are sealed with a plastic package (10). The leads (4) are exposed outward. Each of the end leads (4a) to (4d) has a wide first lead portion, a narrow second lead portion, a third lead portion to be inserted into an external substrate, and a protruding gap-controlling portion (9) for keeping the gap between the semiconductor device (1) and the external substrate constant. Because the heat resistance from the leads (4) to the plastic package (10) increases, the temperature-rise property of the lead is improved so that the solderability is improved.
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Translation of Takayoshi Togawa, title “Printed Circuit Board”. May 15, 1989, JP 01122579A.
Translation of Takehiro Saita, title “Semiconductor Device”, filed Jul. 9, 1988, JP63-166254 A.
Hayashi Ken-ichi
Izuta Goro
Kawafuji Hisashi
Murai Junichi
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Williams Alexander O
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