Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2004-02-24
2010-11-23
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE21578
Reexamination Certificate
active
07838994
ABSTRACT:
A wiring substrate20, comprising a glass substrate, which is provided with through holes20c, each having a tapered part20dthat becomes large in opening area at the side of an input surface20a, and conductive members21, formed on the inner walls of through holes20c, is used. A semiconductor device5is arranged by connecting bump electrodes17, provided on an output surface15bof a PD array15in correspondence with conductive members21, to input portions21aof conductive members21formed on input surface20aof wiring substrate20. A radiation detector is arranged by connecting a scintillator10via an optical adhesive agent11to a light-incident surface15aof PD array15and connecting a signal processing element30via bump electrodes31to output surface20bof wiring substrate20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.
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Hayashi Masahiro
Kusuyama Yutaka
Shibayama Katsumi
Andújar Leonardo
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Harriston William
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