Semiconductor device and radiation detector employing it

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257SE23067, C257S734000, C257S737000, C250S214100, C250S370110, C438S667000

Reexamination Certificate

active

07545044

ABSTRACT:
A wiring substrate20, comprising a glass substrate, formed by integrally bundling a plurality of glass fibers and provided with through holes20c, and conductive members21, disposed at through holes20c, is used. Input portions21aof conductive members21, formed on an input surface20aof this wiring substrate20, are connected to bump electrodes17, which are provided on an output surface15bof a PD array15in one-to-one correspondence with respect to conductive members21, thereby arranging a semiconductor device5. A radiation detector is arranged by connecting a scintillator10via an optical adhesive agent11to a light-incident surface15aof PD array15and connecting a signal processing element30via bump electrodes31to output surface20bof wiring substrate20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.

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