Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2004-02-24
2009-06-09
Chu, Chris C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23067, C257S734000, C257S737000, C250S214100, C250S370110, C438S667000
Reexamination Certificate
active
07545044
ABSTRACT:
A wiring substrate20, comprising a glass substrate, formed by integrally bundling a plurality of glass fibers and provided with through holes20c, and conductive members21, disposed at through holes20c, is used. Input portions21aof conductive members21, formed on an input surface20aof this wiring substrate20, are connected to bump electrodes17, which are provided on an output surface15bof a PD array15in one-to-one correspondence with respect to conductive members21, thereby arranging a semiconductor device5. A radiation detector is arranged by connecting a scintillator10via an optical adhesive agent11to a light-incident surface15aof PD array15and connecting a signal processing element30via bump electrodes31to output surface20bof wiring substrate20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.
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Hayashi Masahiro
Kusuyama Yutaka
Shibayama Katsumi
Chu Chris C.
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
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