Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...
Patent
1996-11-05
1999-03-16
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with other solid-state active device in integrated...
257487, H01L 2974
Patent
active
058834028
ABSTRACT:
A semiconductor device comprises a main switching element, an electric field detector and an on-voltage application unit. The main switching element includes a high-voltage main electrode, at least a low-voltage main electrode and at least a first gate electrode. The electric field detector has a MOS structure making conductive between the high-voltage main electrode and the first gate electrode in a path other than the main switching element in accordance with a predetermined electric field generated in the main switching element. The on-voltage application unit applies an on-voltage to the first gate electrode on the basis of the conductive state.
REFERENCES:
patent: 4646121 (1987-02-01), Ogura
patent: 5343067 (1994-08-01), Nakagawa et al.
"The IGBT With Monolithic Overvoltage Protection Circuit," Tomoyuki Yamazaki et al. Proceedings of 5th International Symposium on Power Semiconductor Devices and ICs; May 18, 1993. p. 41-45.
"Active Surge Voltage Clamped 600A IPM For High Power Application," G. Majumdar et al. Proceeding of 1995 International Symposium of Power Semiconductor Devices & ICs; May 23, 1995. p. 75-79.
Matsushita Ken'ichi
Ninomiya Hideaki
Ogura Tsuneo
Omura Ichiro
Kabushiki Kaisha Toshiba
Martin-Wallace Valencia
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