Semiconductor device and production process thereof, as well as

Details Semiconductor device and production process thereof, as well as Semiconductor device and production process thereof, as well as

1987-12-17

1990-12-11

Ramsey, Kenneth J.

Metal fusion bonding

Process

Using high frequency vibratory energy

228179, 228220, 219 5621, H01L 21607

Patent

active

049763938

ABSTRACT:
The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.
In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

REFERENCES:
patent: 4705204 (1987-11-01), Hirota et al.
patent: 4732313 (1988-03-01), Kobayashi et al.
Atsumi et al., "Ball Bonding Technique for Copper Wire"; from 36th Electronic Components Conference, May 5th-7th, 1986, pp. 312-317, IEEE 1986.
Hirota et al., "The Development of Copper Wire Bonding for Plastic Molded Semiconductor Packages"; from 35th Electronic Components Conference, May 20th-22nd, 1985, pp. 116-121, IEEE 1985.

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