Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

1991-02-04

1993-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437209, 437214, 257777, H01L 2100, H01L 2102, H01L 2160, H01L 2188

Patent

active

051889846

ABSTRACT:
A semiconductor device is produced through processes that; ionized material is poured into a predetermined depth of a silicon substrate so as to be made into etching stopper layer, a predetermined area of the silicon substrate is etched up to the depth of the etching stopper layer so as to form a concave portion, a compound semiconductor chip is accommodated in the concave portion, insulating film is formed covering a space between the surrounding wall of the concave portion and the side wall of the compound semiconductor chip so as to be patterned, and that a second thin film circuit is so formed on the patterned insulating film as to connect between the electrodes on the compound semiconductor chip and a first thin film circuit which is previously formed on the surface of the silicon substrate.

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Csepregi, L., Micromechanics: A Silicon Microfabrication Technology, Microelectronics Engineering 3 (1985), pp. 221-234, North-Holland.

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