Semiconductor device and production method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257632, 257773, H01L 2348

Patent

active

058148876

ABSTRACT:
A semiconductor device having a conductor film for inhibiting intrusion of moisture, mobile ions, etc. into a semiconductor chip from its peripheral edge, formed in a contact trench formed in an inter-layer insulating film. The conductor film divides the inter-layer insulating film into a peripheral edge side and an internal side and is moreover connected electrically to a semiconductor substrate. Therefore, any moisture or mobile ions entering the inter-layer insulating film from the peripheral edge of the semiconductor chip are electrically caught or expelled and cannot enter the semiconductor chip. Further, because the conductor film is formed inside the contact trench, the conductor film does not peel from the semiconductor chip even when any influences of the moisture or the mobile ions caught exist. An internal conductor can be insulated from outside by providing a protective film for covering the upper and said surfaces of the semiconductor chip.

REFERENCES:
patent: 4617193 (1986-10-01), Wu
patent: 4851895 (1989-07-01), Green et al.
patent: 5376817 (1994-12-01), Seyyedy et al.
patent: 5486712 (1996-01-01), Arima
patent: 5519237 (1996-05-01), Itoh et al.
patent: 5606202 (1997-02-01), Bronner et al.
patent: 5648678 (1997-07-01), Begley et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and production method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-688277

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.