Semiconductor device and production method therefor

Details Semiconductor device and production method therefor Semiconductor device and production method therefor

2002-11-27

2010-10-19

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S411000, C257SE29084, C257SE29014, C257SE29165

Reexamination Certificate

active

07816688

ABSTRACT:
An upper part of a SIC substrate1is oxidized at a temperature of 800 to 1400° C., inclusive, in an oxygen atmosphere at 1.4×102Pa or less, thereby forming a first insulating film2which is a thermal oxide film of 20 nm or less in thickness. Thereafter, annealing is performed, and then a first cap layer3, which is a nitride film of about 5 nm in thickness, is formed thereon by CVD. A second insulating film4, which is an oxide film of about 130 nm in thickness, is deposited thereon by CVD. A second cap layer5, which is a nitride film of about 10 nm in thickness, is formed thereon. In this manner, a gate insulating film6made of the first insulating film2through the second cap layer5is formed, thus obtaining a low-loss highly-reliable semiconductor device.

REFERENCES:
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6025608 (2000-02-01), Harris et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6482704 (2002-11-01), Amano et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 2001/0009788 (2001-07-01), Lipkin et al.
patent: 2002/0030191 (2002-03-01), Das et al.
patent: 05-82777 (1993-04-01), None
patent: 07-169866 (1995-07-01), None
patent: 08-172091 (1996-07-01), None
patent: 10-163338 (1998-06-01), None
patent: 11-67757 (1999-03-01), None
patent: 11-233760 (1999-08-01), None
patent: 11-297712 (1999-10-01), None
patent: 2000-286258 (2000-10-01), None
patent: 2001-210637 (2001-08-01), None
patent: 2001-274157 (2001-10-01), None
patent: 2001-274167 (2001-10-01), None
patent: WO 00/13236 (2000-03-01), None
Hui-feng Li et al., Investigation of nitric oxide and Ar annealed SiO2/SiC Interfaces by x-ray Photoelectron spectroscopy, Journal of Applied Physics, Oct. 15, 1999, pp. 4316 to 4321.
Won-ju Cho et al., Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors, Applied Physics Letters, Sep. 25, 2000, pp. 2054 to 2056.
Philippe Jamet et al., Effects of nitridation in gate oxides grown on 4H-SiC, Journal of Applied Physics, Nov. 15, 2001, pp. 5058 to 5063.
Supplementary European Search Report issued in European Patent Application No. EP 02 78 3666, dated Jan. 21, 2008.
Lipkin, L. A., et al., “Insulator Investigation on SiC for Improved Reliability,” IEEE Transactions on Electron Devices, Mar. 1999, pp. 525-532, vol. 46, No. 3, XP-000926942, IEEE.
Lipkin, L. A., et al., “SiC Devices with ONO Stacked Dielectrics,” Materials Science Forum, 2000, pp. 1093-1096, vol. 338-342, XP-002951596, Trans Tech Publications, Switzerland.
Japanese Office Action issued in Japanese Patent Application No. 2003-548317, mailed Sep. 1, 2009.

Affiliated with

Also associated with

Rating

Semiconductor device and production method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and production method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and production method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4203492