Semiconductor device and production method therefor

Details Semiconductor device and production method therefor Semiconductor device and production method therefor

2006-11-28

2006-11-28

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S549000

Reexamination Certificate

active

07141840

ABSTRACT:
A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026atoms/m3or more and 1027atoms/m3or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.

REFERENCES:
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patent: 6300206 (2001-10-01), Fukada et al.
patent: 6670251 (2003-12-01), Fukada et al.
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patent: 03-139827 (1991-06-01), None
patent: 09-074176 (1997-03-01), None
patent: 11-186188 (1999-07-01), None

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