Semiconductor device and production method of the same

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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Details

C257S529000, C257S209000, C257SE23149, C257SE27102, C257SE21592, C438S215000, C438S333000, C438S467000, C438S601000

Reexamination Certificate

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07833844

ABSTRACT:
A disclosed method of producing a semiconductor device includes the steps of (A) forming a gate electrode and a trimming fuse on a semiconductor substrate; (B) forming a side wall insulating film covering the gate electrode and the trimming fuse; (C) forming a conductive film on the side wall insulating film and patterning the conductive film to form an etching stop layer and a resistance element; (D) forming a side wall on the sides of the gate electrode; (E) repeating, one or more times, sub-steps of forming an interlayer insulating film and of forming an upper wiring layer, and then forming a passivation film; (F) removing the passivation film and the interlayer insulating film in the trimming opening forming area until the etching stop layer is exposed; and (G) forming the trimming opening by removing the etching stop layer in the trimming opening forming area.

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