Semiconductor device and process of producing the same

Details Semiconductor device and process of producing the same Semiconductor device and process of producing the same

2007-07-03

2007-07-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

C438S380000, C438S382000, C257SE21004

Reexamination Certificate

active

11000092

ABSTRACT:
The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

REFERENCES:
patent: 4178674 (1979-12-01), Liu et al.
patent: 4367580 (1983-01-01), Guterman
patent: 4466081 (1984-08-01), Masuoka
patent: 4475964 (1984-10-01), Ariizumi et al.
patent: 4961103 (1990-10-01), Saitoh et al.
patent: 5017979 (1991-05-01), Fujii et al.
patent: 5037766 (1991-08-01), Wang
patent: 5053849 (1991-10-01), Izawa et al.
patent: 5101250 (1992-03-01), Arima et al.
patent: 5126809 (1992-06-01), Hirai
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5147813 (1992-09-01), Woo
patent: 5168075 (1992-12-01), Kuo
patent: 5200733 (1993-04-01), Davis et al.
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 5229631 (1993-07-01), Woo
patent: 5231041 (1993-07-01), Arima et al.
patent: 5349494 (1994-09-01), Ando
patent: 5364805 (1994-11-01), Taura et al.
patent: 5434438 (1995-07-01), Kuo
patent: 5464998 (1995-11-01), Hayakawa et al.
patent: 5506737 (1996-04-01), Lin et al.
patent: 5510642 (1996-04-01), Ogawa
patent: 5565371 (1996-10-01), Gill
patent: 5831326 (1998-11-01), Chan et al.
patent: 6124168 (2000-09-01), Ong
patent: 5552252 (1980-04-01), None
patent: 586598 (1983-01-01), None
patent: 5842264 (1983-03-01), None
patent: 58225648 (1983-12-01), None
patent: 233967 (1990-02-01), None
patent: 330363 (1991-02-01), None
patent: 3166757 (1991-07-01), None
patent: 4145657 (1992-05-01), None
patent: 4170064 (1992-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and process of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3753085