Semiconductor device and process of producing same

Details Semiconductor device and process of producing same Semiconductor device and process of producing same

1997-07-03

1999-02-02

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438742, 438652, 257750, H01L 2100

Patent

active

058664840

ABSTRACT:
The object of the present invention is to provide a semiconductor device and a process of producing the same, in which a low contact resistance is ensured, the interwiring connection of a multilayered conductor wiring structure has good long term reliability, and the production time can be reduced. An interlaminar insulating layer 4 is etched with an etchant gas containing a fluorine-based gas to form a contact hole 6, during which a fluoride layer 22 is formed on a Ti layer 13 which forms an upper protective layer of a conductor wiring layer 3 on the bottom of the contact hole 6. According to the present invention, the fluoride layer 22 is removed, together with the Ti layer 13 on the bottom of the contact hole 6, by a gas mixture of a fluorine-based gas and oxygen gas in an ashing apparatus.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 5686354 (1997-11-01), Avanzino et al.

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