Semiconductor device and process for production thereof

Details Semiconductor device and process for production thereof Semiconductor device and process for production thereof

2007-08-28

2007-08-28

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S195000, C257S197000, C257S014000, C257S020000, C257S023000, C257SE21407

Reexamination Certificate

active

11103121

ABSTRACT:
A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

REFERENCES:
patent: 5161235 (1992-11-01), Shur et al.
patent: 6281528 (2001-08-01), Wada
patent: 6410947 (2002-06-01), Wada
patent: 6534790 (2003-03-01), Kato et al.

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