Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-24
2007-04-24
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S296000, C257S300000, C257SE27017
Reexamination Certificate
active
11120175
ABSTRACT:
Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
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Fukunaga Takeshi
Koyama Jun
Shibata Hiroshi
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Fourson George R.
Pham Thanh V.
Semiconductor Energy Laboratory Co,. Ltd.
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