Semiconductor device and process for producing the same

Details Semiconductor device and process for producing the same Semiconductor device and process for producing the same

1978-11-29

1982-04-20

Wojciechowicz, Edward J.

357 23, 357 41, 357 42, 357 45, 357 55, 357 59, H01L 2702

Patent

active

043262139

ABSTRACT:
A polycrystalline silicon is used for a resistor element of a semiconductor device instead of a conventional, diffused resistor or a channel resistor, in which the channel resistance of an MOS transistor is utilized as the resistor. The length of a polycrystalline silicon layer for the resistor element is predetermined by the other polycrystalline silicon layer, formed above the resistor element. The structure of the semiconductor device according to the present invention is suited for a high density integrated circuit.

REFERENCES:
patent: 4110776 (1978-08-01), Rao et al.
patent: 4209716 (1980-06-01), Raymond

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