Semiconductor device and process for producing the same

Details Semiconductor device and process for producing the same Semiconductor device and process for producing the same

2005-04-19

2005-04-19

Quach, T. N. (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S435000

Reexamination Certificate

active

06881646

ABSTRACT:
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

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English language translation of the abstract and claims of the document.
Tamaki et al. “Evaluation of Dislocation Generation in U-Groove Isolation” Solid-State Science and Technology, Mar. 1988.
Bryant et al., “Characteristics of CMOS Device Isolation for the ULSI Age” IEEE 1994.

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