Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1994-08-03
1996-01-30
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257432, 257435, H01L 2714, H01L 2702
Patent
active
054882516
ABSTRACT:
A photosensor includes a semiconductor substrate of a first-conductivity type with a photoelectric conversion element such as photodiode thereon. The photodiode has a second, opposite conductivity and is surrounded at all of the bottom and sides by a domain having the second conductivity and a high impurity concentration. A first-conductivity domains forms a junction with the second-conductivity domain, and the photodiode is separated from other semiconductor elements by a first-conductivity domain.
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Kondo Shigeki
Mizutani Hidemasa
Canon Kabushiki Kaisha
Hille Rolf
Martin Wallace Valencia
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