Semiconductor device and process for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257432, 257435, H01L 2714, H01L 2702

Patent

active

054882516

ABSTRACT:
A photosensor includes a semiconductor substrate of a first-conductivity type with a photoelectric conversion element such as photodiode thereon. The photodiode has a second, opposite conductivity and is surrounded at all of the bottom and sides by a domain having the second conductivity and a high impurity concentration. A first-conductivity domains forms a junction with the second-conductivity domain, and the photodiode is separated from other semiconductor elements by a first-conductivity domain.

REFERENCES:
patent: 4034395 (1977-07-01), Abdelrahman
patent: 4155094 (1979-05-01), Ohba et al.
patent: 4486942 (1984-12-01), Hirao
patent: 4621275 (1986-11-01), Ueno et al.
patent: 4623909 (1986-11-01), Nishigawa et al.
patent: 4635087 (1987-01-01), Birrittella et al.
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 4651016 (1987-03-01), Hirao
patent: 4665422 (1987-05-01), Hirao et al.
patent: 4672221 (1987-06-01), Saito et al.
patent: 4684970 (1987-08-01), Sloane et al.
patent: 4727407 (1988-02-01), Nobue et al.
patent: 4743955 (1988-05-01), Matsumoto
patent: 4752589 (1988-06-01), Schaber

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for producing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-158073

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.