Semiconductor device and process for producing same

Details Semiconductor device and process for producing same Semiconductor device and process for producing same

1991-02-27

1993-02-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257607, H01L 2904, H01L 2702, H01L 29167

Patent

active

051875594

ABSTRACT:
A semiconductor device provided with a polycrystalline silicon resistor containing an impurity in a high concentration and having a resistance adjusted by a current conduction therethrough at a current density of a threshold value or more, which comprises: a polycrystalline silicon resistor containing a first impurity having a negative value of a temperature coefficient of resistance in a high impurity concentration region of said polycrystalline silicon resistor and a second impurity having a positive value of a temperature coefficient of resistance in a high impurity concentration region of the polycrystalline silicon resistor. A process for producing same is also disclosed.

REFERENCES:
patent: 4210996 (1980-07-01), Amemiya et al.
Kato, Kotaro et al., "Electrical Trimming of Heavily Doped Polycrystalline Silicon Resistors", Musashino Electrical Communication Laboratory, Technical Report SSD79-16, Institute of Electronic Communication, 1979, pp. 31-38.

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