Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-03-25
1985-12-10
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29591, 148 15, 148DIG103, 148DIG105, 357 67, 427 88, 427 43, H01L 2128
Patent
active
045570361
ABSTRACT:
A multilayer structure comprising a Si layer/ a refractory metal oxide layer/ a refractory metal layer/ is subjected to annealing in an atmosphere of hydrogen or an inert gas mixed with hydrogen, thereby converting the multilayer structure into a multilayer structure comprising a Si layer/an inner SiO.sub.2 layer formed by internal oxidation of Si/a refractory metal layer. The inner SiO.sub.2 layer is selectively formed only on the surface of the refractory metal layer, since Si is internally oxidized from the side of the refractory metal layer. In case of gate electrode of a MISFET, the gate electrode and a contact hole for source or drain electrode are positioned in self-alignment with each other via the inner SiO.sub.2 layer. The distance between the gate electrode and the source or drain electrode is determined by the thickness of the inner SiO.sub.2 layer. A semiconductor device with a high density and a high speed is realized.
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patent: 3679492 (1972-07-01), Fang et al.
patent: 3966501 (1976-06-01), Nomura et al.
patent: 3967981 (1976-07-01), Yamazaki
patent: 4149307 (1979-04-01), Henderson
Yanagawa et al., Mo-Gate MOS Metallization System Japanese Journal of Applied Physics, vol. 18 (1979), Supplement 18-1, pp. 237-245.
F. Faggin & T. Klein, Silicon Gate Technology, Solid-State Electronics 1970, vol. 13, pp. 1125-1144.
Kyuragi Hakaru
Oikawa Hideo
Hearn Brian E.
Hey David A.
Nippon Telegraph & Telephone Public Corp.
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