Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-11-12
2000-09-05
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257915, 257763, 257767, H01L 2943
Patent
active
061147648
ABSTRACT:
A semiconductor device, comprising: an insulating layer formed on a semiconductor body; a barrier metal layer comprising titanium nitride formed on the insulating layer; and a n aluminum based alloy layer formed on the barrier metal layer, provided that the aluminum based alloy crystals constituting the aluminum based alloy layer have the crystallographic <111> axis thereof inclined by an angle of from 0 to 5 degrees with respect to the normal of the barrier metal layer on the insulating layer. Also claimed is a process for fabricating the semiconductor device.
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G. A. Dixit, et al. "A Novel 0.25 mu: via plug process using low temp. CVD Al/TiN" Int. Electron. Dev. Meeting Tech. Dig. IEEE Conf. Wash. DC. (Dec. 10-13, 1995) pp. 1001-1004. Abstract only.
Hisako Ono, et al. "Development of a Planarized Al-Si Contact Filling Technology" Proc. 7th International IEEE VLSI Multilevel Interconnect. Conf. (Jun. 1990) pp. 77-81. (abstract).
Kaizuka, T., et al. "Conformal CVD TiN film formation as an underlayer of Al . . . " Japanese J. of Appl. Phys. (Pt. I) (Jan. 1994) V.33 No. 1B p 470-4.
Hoshino Kazuhiro
Miyamoto Takaaki
Everhart Caridad
Sony Corporation
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