Semiconductor device and process for fabricating the same

Details Semiconductor device and process for fabricating the same Semiconductor device and process for fabricating the same

1996-06-27

1997-08-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

257 52, 257347, 257353, 257354, 257507, 257627, H01L 2904

Patent

active

056613113

ABSTRACT:
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.

REFERENCES:
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4523963 (1985-06-01), Ohta et al.
patent: 5212397 (1993-05-01), See et al.

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