Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Patent
1994-08-08
1996-10-29
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
257 52, 257347, 257353, 257354, 257507, 257627, 437 48, 437 84, 437235, 437247, H01L 2904, H01L 21265
Patent
active
055699359
ABSTRACT:
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.
REFERENCES:
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4523963 (1985-06-01), Ohta et al.
patent: 5212397 (1993-05-01), See et al.
Adachi Hiroki
Takemura Yasuhiko
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
Wojciechowicz Edward
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