Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-12-29
2000-10-17
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257 55, 257 59, 257 57, 257 72, 257639, 257640, H01L 2904, H01L 2128
Patent
active
061336203
ABSTRACT:
A semiconductor device comprising a thin film transistor, and a process for fabricating the same, the process comprising: a first step of forming an island-like semiconductor layer, a gate insulating film covering the semiconductor layer, and a gate electrode comprising a material containing aluminum as the principal component formed on the gate insulating film; a second step of introducing impurities into the semiconductor layer in a self-aligned manner by using the gate electrode as the mask; a third step of forming an interlayer dielectric to cover the gate electrode, and forming a contact hole in at least one of source and drain; a fourth step of forming over the entire surface, a film containing aluminum as the principal component, and then forming an anodic oxide film by anodically oxidizing the film containing aluminum as the principal component; a fifth step of etching the film containing aluminum as the principal component and the anodic oxide film, thereby forming a second layer interconnection containing aluminum as the principal component; and a sixth step of forming over the second layer interconnection, a film containing silicon nitride as the principal component thereof.
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Duong Hung Van
Picard Leo P.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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