Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-09-19
2006-09-19
Patel, Rajnikant B. (Department: 2838)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S666000, C257S724000, C363S127000
Reexamination Certificate
active
07109577
ABSTRACT:
A power MOS-FET is used as a high side switch transistor for a non-insulated DC/DC converter. An electrode section that serves as a source terminal of the power MOS-FET is connected to one outer lead and two outer leads via bonding wires respectively. The outer lead is an external terminal connected to a path for driving the gate. Each of the outer leads is an external terminal connected to a main current path. Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.
REFERENCES:
patent: 6137165 (2000-10-01), Thierry
patent: 6737301 (2004-05-01), Eden et al.
patent: 2002-9219 (2002-01-01), None
Iwasaki Takayuki
Matsuura Nobuyoshi
Shiraishi Masaki
Uno Tomoaki
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Patel Rajnikant B.
Renesas Technology Corp.
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