Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1994-03-14
1998-01-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257191, 257 77, 257197, H01L 310328, H01L 31072, H01L 31109, H01L 310312
Patent
active
057082812
ABSTRACT:
A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.
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Canon Kabushiki Kaisha
Jackson Jerome
Tang Alice W.
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