Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-01-25
2011-01-25
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S277000, C257SE23013, C257SE23103
Reexamination Certificate
active
07875911
ABSTRACT:
A semiconductor device includes a semiconductor substrate including an active element or an integrated circuit and a plurality of connection electrodes to be electrically connected to the integrated circuit; a first resin layer formed on a surface of the semiconductor substrate on which the connection electrodes are formed in such a manner avoiding the connection electrodes; a connection wiring layer formed between the semiconductor substrate and the first resin layer and connected to one of the plurality of connection electrodes; a Cu wiring layer connected at one end thereof to the connection wiring layer and formed on the surface of the first resin layer; a passive element composed of the connection wiring layer and the Cu wiring layer; a second resin layer for covering a surface of the Cu wiring layer; and an external terminal electrically connected to some of the plurality of connection electrodes and formed such that a portion of the second resin layer protrudes from the second resin layer.
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Chiu Tsz K
Oliff & Berridg,e PLC
Seiko Epson Corporation
Smith Zandra
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