Semiconductor device and multilayer wiring board

Details Semiconductor device and multilayer wiring board Semiconductor device and multilayer wiring board

2011-07-12

2011-07-12

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S759000, C257SE23167

Reexamination Certificate

active

07977796

ABSTRACT:
A gas or an insulating material having a relative dielectric constant of not more than 2.5 on average is interposed between a first wiring layer and a second wiring layer included in a multilayer wiring structure. Between a wiring of the first wiring layer and a wiring of the second wiring layer, a conductive connector is arranged. Between a predetermined wiring of the first wiring layer and a predetermined wiring of the second wiring layer, an insulating heat conductor having a relative dielectric constant of not more than 5 is arranged.

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