Semiconductor device and MIM capacitor

Details Semiconductor device and MIM capacitor Semiconductor device and MIM capacitor

2007-04-24

2007-04-24

Pert, Evan (Department: 2826)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C257S532000, C257SE27071, C257SE29343

Reexamination Certificate

active

11522410

ABSTRACT:
An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patterns formed in a second interlayer insulation film separated from the first interlayer insulation film by a via-insulation film, such that the third and fourth conductor patterns extend in the second layer interlayer insulation film continuously in a mutually opposing relationship as a part of the comb-shaped capacitor pattern, wherein there is formed a fifth conductor pattern extending in the via-insulation film continuously in correspondence to the first and third conductor patterns so as to connect the first and third conductor patterns continuously, and wherein there is formed a sixth conductor pattern extending in the via-insulation film continuously in correspondence to the second and fourth conductor patterns so as to connect the second and fourth conductor patterns continuously.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6690570 (2004-02-01), Hajimiri et al.
patent: 6864526 (2005-03-01), Inbe
patent: 6903402 (2005-06-01), Miyazawa
patent: 7009832 (2006-03-01), Chen et al.
patent: 2006/0157766 (2006-07-01), Won et al.
patent: 2004-95754 (2004-03-01), None
patent: 2004-241762 (2004-08-01), None

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