Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-09-18
2011-11-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S210100, C365S210110
Reexamination Certificate
active
08064262
ABSTRACT:
A semiconductor device in accordance with one embodiment of the invention can include a first data storage region including a non-volatile main data storage region. Additionally, the semiconductor device can include a second data storage region including a non-volatile reference region wherein an erasing operation and a writing operation are performed on both the first data storage region and the second data storage region. Moreover, the semiconductor device can also include a control unit coupled to the first and second data storage regions which determines a stress condition corresponding to the first data storage region based on a stress information related to the second data storage region.
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Phung Anh
Reidlinger Lance
Spansion LLC
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