Semiconductor device and method therefore

Details Semiconductor device and method therefore Semiconductor device and method therefore

1990-06-25

1992-09-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 68, 437974, 437925, 148DIG168, H01L 21302

Patent

active

051457954

ABSTRACT:
An improved high frequency dielectrically isolated (DIC) transistor (100) or integrated circuit is obtained by providing a highly doped single crystal semiconductor region (112) coupled to the device reference terminal (16') and extending between front (98) and rear (61) faces of the semiconductor die. This allows the reference terminal (16', 116) to be coupled to the package ground plane without use of wire bonds, thereby lowering the common mode impedance. The desired structure is formed in connection with DIC devices (100) by etching first (66) and second (77) nested cavities into a single crystal substrate (60). The cavities (66) form protruding islands (821, 822) of single crystal semiconductor having a height (80+68) about equal the final die thickness (110) and which, after conventional DIC processing using an oxide isolation layer (86) and a poly handle (88), are exposed by grinding away the poly handle (88) to expose the highly doped, single crystal reference terminal feed-through (112).

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