Semiconductor device and method of selecting the same

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257796, 257717, 257707, 437226, H01L 2312, H01L 2166, H01L 2352

Patent

active

055962238

ABSTRACT:
A semiconductor device has a plated heat sink structure. The plated heat sink structure includes an Ni-plating layer.

REFERENCES:
patent: 4577398 (1986-03-01), Sliwa et al.
patent: 4876588 (1989-10-01), Miyamoto
patent: 4965659 (1990-10-01), Sasame et al.
patent: 5250845 (1993-10-01), Runyan
patent: 5324981 (1994-06-01), Kobiki et al.
patent: 5338967 (1994-08-01), Kosaki
patent: 5457072 (1995-10-01), Tamaki et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of selecting the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of selecting the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of selecting the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2326178

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.