Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2007-10-02
2007-10-02
Doan, Theresa (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S424000
Reexamination Certificate
active
11285968
ABSTRACT:
A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.
REFERENCES:
patent: 5640041 (1997-06-01), Lur et al.
patent: 6512283 (2003-01-01), Davies
Averett Guy E.
Bratten Gordon L.
Cai Weizhong
Kamekona Keith G.
Ruiz, Jr. Bladimiro
Doan Theresa
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
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