Semiconductor device and method of production

Details Semiconductor device and method of production Semiconductor device and method of production

1991-05-10

1992-02-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 57, 437200, 357 239, 357 42, H01L 21265

Patent

active

050860062

ABSTRACT:
A novel semiconductor device and method of production of such a device are provided. Both the N and P channels of the novel semiconductor device are formed by contact self-alignment, thereby permitting high speed operation and high density integration to be realized. The formation of the channels by contact self-alignment is accomplished by depositing a P type polysilicon layer on an N well region and an N type polysilicon layer on a P well region. A silicide layer is formed over both the P and N type polysilicon layers to form a polycide.

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