Fishing – trapping – and vermin destroying
Patent
1992-07-17
1993-03-02
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 44, 437 57, 437192, 437200, 257371, 257384, 257413, H01L 21265
Patent
active
051908867
ABSTRACT:
A novel semiconductor device and method of production of such a device are provided. Both the N and P channels of the novel semiconductor device are formed by contact self-alignment, thereby permitting high speed operation and high density integration to be realized. The formation of the channels by contact self-alignment is accomplished by depositing a P type polysilicon layer on an N well region and an N type polysilicon layer on a P well region. A silicide layer is formed over both the P and N type polysilicon layers to form a polycide.
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Hearn Brian E.
Picardat Kevin M.
Seiko Epson Corporation
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