Semiconductor device and method of producing the same, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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C257S147000, C257S584000, C257SE29104, C257SE29212

Reexamination Certificate

active

07544970

ABSTRACT:
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

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