Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

2011-01-31

2011-12-13

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S380000, C438S570000, C257SE21357

Reexamination Certificate

active

08076173

ABSTRACT:
A semiconductor substrate and a method of its manufacture has a semiconductor substrate having a carbon concentration in a range of 6.0×1015to 2.0×1017atoms/cm3, both inclusively. One principal surface of the substrate is irradiated with protons and then heat-treated to thereby form a broad buffer structure, namely a region in a first semiconductor layer where a net impurity doping concentration is locally maximized. Due to the broad buffer structure, lifetime values are substantially equalized in a region extending from an interface between the first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer to the region where the net impurity doping concentration is locally maximized. In addition, the local minimum of lifetime values of the first semiconductor layer becomes high. It is thus possible to provide a semiconductor device having soft recovery characteristics, in addition to high-speed and low-loss characteristics, while suppressing a kinked leakage current waveform.

REFERENCES:
patent: 5093693 (1992-03-01), Abbas et al.
patent: 7919790 (2011-04-01), Nemoto
patent: 2001/0005024 (2001-06-01), Bauer et al.
patent: 2002/0130331 (2002-09-01), Nemoto et al.
patent: 2004/0041225 (2004-03-01), Nemoto
patent: 2007/0108558 (2007-05-01), Nemoto
patent: 04-252078 (1992-09-01), None
patent: 5-102161 (1993-04-01), None
patent: 7-297415 (1995-10-01), None
patent: 2002-520885 (2002-07-01), None
patent: 2003-152198 (2003-05-01), None
patent: 2003-224134 (2003-08-01), None
patent: 2003-318412 (2003-11-01), None
patent: 2006-69852 (2006-03-01), None
patent: 2006-332127 (2006-12-01), None
patent: 2006-352101 (2006-12-01), None
patent: 2007-96348 (2007-04-01), None
patent: 2007-123932 (2007-05-01), None
patent: 2007-158320 (2007-06-01), None
patent: 2007-266233 (2007-10-01), None
patent: 2007-055352 (2007-05-01), None
Power Device & Power IC Handbook, edited by the Institute of Electrical Engineers of Japan, High Performance and High Function Power Device and Power IC Investigation and Research Committee, first edition, pp. 68-71, CORONA Publishing Co., Ltd., Jul. 30, 1996.

Affiliated with

Also associated with

Rating

Semiconductor device and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272006