Semiconductor device and method of producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – Reverse bias tunneling structure

Reexamination Certificate

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C257S481000, C257S603000, C257SE29335, C438S091000, C438S380000

Reexamination Certificate

active

07919790

ABSTRACT:
A semiconductor substrate and a method of its manufacture has a semiconductor substrate having a carbon concentration in a range of 6.0×1015to 2.0×1017atoms/cm3, both inclusively. One principal surface of the substrate is irradiated with protons and then heat-treated to thereby form a broad buffer structure, namely a region in a first semiconductor layer where a net impurity doping concentration is locally maximized. Due to the broad buffer structure, lifetime values are substantially equalized in a region extending from an interface between the first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer to the region where the net impurity doping concentration is locally maximized. In addition, the local minimum of lifetime values of the first semiconductor layer becomes high. It is thus possible to provide a semiconductor device having soft recovery characteristics, in addition to high-speed and low-loss characteristics, while suppressing a kinked leakage current waveform.

REFERENCES:
patent: 5093693 (1992-03-01), Abbas et al.
patent: 2001/0005024 (2001-06-01), Bauer et al.
patent: 2002/0130331 (2002-09-01), Nemoto et al.
patent: 2004/0041225 (2004-03-01), Nemoto
patent: 2007/0108558 (2007-05-01), Nemoto
patent: 04-252078 (1992-09-01), None
patent: 5-102161 (1993-04-01), None
patent: 7-297415 (1995-10-01), None
patent: 2002-520885 (2002-07-01), None
patent: 2003-152198 (2003-05-01), None
patent: 2003-224134 (2003-08-01), None
patent: 2006-332127 (2003-08-01), None
patent: 2003-318412 (2003-11-01), None
patent: 2006-69852 (2006-03-01), None
patent: 2006-352101 (2006-12-01), None
patent: 2007-96348 (2007-04-01), None
patent: 2007-123932 (2007-05-01), None
patent: 2007-158320 (2007-06-01), None
patent: 2007-266233 (2007-10-01), None
patent: 2007/055352 (2007-05-01), None
Power Device & Power IC Handbook, edited by the Institute of Electrical Engineers of Japan, High Performance and High Function Power Device and Power IC Investigation and Research Committee, first edition, pp. 68-71, Corona Publishing Co., Ltd., Jul. 30, 1996.

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