Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1990-03-28

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 44, 437 51, H01L 2170, H01L 2700

Patent

active

050988557

ABSTRACT:
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors of a LDD structure having a floating gate as memory cells and second field effect transistors of the LDD structure as elements other than the memory cells, and which is used as EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.

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