Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1988-12-29

1990-04-17

James, Andrew J.

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357 233, 365185, H01L 2978

Patent

active

049185012

ABSTRACT:
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors of an LDD structure having a floating gate as memory cells and second field effect transistors of the LDD structure as elements other than the memory cells, and which is used as EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.

REFERENCES:
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 4488351 (1984-12-01), Momose
patent: 4532697 (1985-08-01), Ko
patent: 4630086 (1986-12-01), Sato et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 4665418 (1987-05-01), Mizutani
patent: 4686558 (1987-08-01), Adam
Tsang, P. J. et al., "Fabrication of High--Performance LDDFET's . . . ", IEEE Tran. Elec. Dev., Apr. 1982, pp. 590-596.

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