Semiconductor device and method of producing semiconductor devic

Details Semiconductor device and method of producing semiconductor devic Semiconductor device and method of producing semiconductor devic

1991-05-28

1993-01-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 56, 437 34, 148DIG82, H01L 21265

Patent

active

051806827

ABSTRACT:
A semiconductor device composed of: a semiconductor substrate of a first conductivity type having a first impurity concentration; a belt-shaped impurity layer of the first conductivity type which is formed in the substrate so as to be spaced apart from a surface of the substrate and which has a second impurity concentration which is higher than the first concentration at a first depth from the surface of the substrate; a gate electrode formed on the substrate via a first insulating film; a second impurity layer of a second conductive type which is formed in the substrate on both sides of the gate electrode such as to be spaced apart from each other and has a third impurity concentration at a second depth from the surface of the semiconductor substrate, whose lower surface abuts against the first impurity layer or is present thereabove, the second impurity layer having a configuration projecting downward of the gate electrode at a portion thereof adjacent to the first impurity layer; side wall insulating films each formed on a side wall of the gate electrode; and a third impurity layer of the second conductivity type which is formed in the second impurity layer laterally of the side wall insulating film and has a fourth concentration higher than the third concentration.

REFERENCES:
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4642878 (1987-02-01), Maeda
patent: 4818714 (1989-04-01), Haskell
patent: 4851257 (1989-07-01), Young et al.
patent: 4906588 (1990-03-01), Harrington, III
patent: 4943537 (1990-07-01), Harrington, III
patent: 5024960 (1991-06-01), Haken

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