Semiconductor device and method of producing same

Details Semiconductor device and method of producing same Semiconductor device and method of producing same

1998-05-20

2000-02-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

257734, H01L 23544, H01L 2348

Patent

active

060256524

ABSTRACT:
In a semiconductor device having a mark opening portion such as an alignment mark and an overlay mark, a BPSG film formed by patterning on this mark opening portion interposing a first conductive film is covered by a second conductive film; and the BPSG film serves as a core of a cylindrical storage node and is removed after the second conductive film is formed in a shape of sidewall by a vapor phase HF treatment process, whereby a conductive contaminant is not peeled off at the time of removing the BPSG film, wherein a drop of yield can be restricted.

REFERENCES:
patent: 5503962 (1996-04-01), Caldwell

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