Semiconductor device and method of producing same

Details Semiconductor device and method of producing same Semiconductor device and method of producing same

1997-03-24

1999-04-27

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438425, 438431, 438437, 148DIG50, H01L 2176

Patent

active

058973613

ABSTRACT:
A trench 13 is formed to isolate a first region 11a and a second region 11b where elements of a semiconductor substrate 11 such as a silicon substrate are formed, and a lamination layer of a first silicon oxide layer 14 having a silicon excess stoichiometry (SiO.sub.x ; 2<x) and a second silicon oxide layer 15 (SiO.sub.2) having an equilibrium composition is filled in the trench 13. The second silicon oxide layer is hydrated. In addition, by heating the semiconductor substrate 11, the first silicon oxide layer 14 is oxidized into the second silicon oxide layer 15 (SiO.sub.2) having an equilibrium composition. At this time, the first silicon oxide layer 14 has its volume expanded while it is oxidized into the second silicon oxide layer 15 having an equilibrium composition, while the second silicon oxide layer 15 is contracted due to dehydration by the heating treatment and removal of a defective lattice. Therefore, the volume expansion of the first silicon oxide layer 14 is offset by the volume contraction of the second silicon oxide layer 15 to reduce extensively a stress to be applied to the semiconductor substrate 11, so that the silicon oxide layer filled in the trench 13 can be densified.

REFERENCES:
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4238278 (1980-12-01), Antipov
patent: 5472904 (1995-12-01), Figura et al.
patent: 5492858 (1996-02-01), Bose et al.
L.K. White et al., "Fusible BPSG Glass Trench Refill Process", David Sarnoff Research Center, 1046b Extended Abstracts; vol. 90/2, Jan. 1, 1990, pp. 406-407.

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