Semiconductor device and method of operating a semiconductor...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185170

Reexamination Certificate

active

11066731

ABSTRACT:
The invention considers a non-volatile semiconductor memory device comprising a first and second floating gate transistor, which are coupled in series. Each floating gate transistor comprises a floating gate. Programming means coupled to the first and second floating gate transistor are operable to place a selected electrical charge in one of the floating gates and less than the selected electrical charge in the other floating gate to represent either a first or second binary value.

REFERENCES:
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patent: 5740106 (1998-04-01), Nazarian
patent: 5812450 (1998-09-01), Sansbury et al.
patent: 6002610 (1999-12-01), Cong et al.
patent: 6144580 (2000-11-01), Murray
patent: 6356478 (2002-03-01), McCollum
patent: 6740106 (2004-05-01), Kobayashi et al.

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