Semiconductor device and method of measuring sheet...

Details Semiconductor device and method of measuring sheet... Semiconductor device and method of measuring sheet...

2007-08-14

2009-12-01

Dole, Timothy J (Department: 2831)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S722000, C324S763010

Reexamination Certificate

active

07626402

ABSTRACT:
Contact holes (openings) (17) are created in the upper electrode (14) and the dielectric film (15) of a polysilicon-insulator-polysilicon (PIP) capacitive element to form a plurality of evaluation patterns wherein the lower electrode (13) and upper layer wiring lines (20) for measurement are electrically connected through contacts (16). At least four evaluation patterns are created by a combination of two or more values of a distance L with different values of a width W. Since it can be assumed that a difference in the resistance value between the respective evaluation patterns is only due to the effect of a change in a rectangular region (W*L) between the contact holes (openings) (17), it is possible to easily calculate the sheet resistance of the high-resistance portion from a change in the resistance value of each of the measurement patterns.

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