Semiconductor device and method of manufacturing without damagin

Details Semiconductor device and method of manufacturing without damagin Semiconductor device and method of manufacturing without damagin

1998-12-08

2000-10-31

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257774, 257501, 257506, 257508, 257524, H01L 2348, H01L 2352, H01L 2940

Patent

active

061407062

ABSTRACT:
HSQ is employed as a dielectric layer in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of the semiconductor device, as from photoresist stripping using an O.sub.2 -containing plasma, is avoided by forming first and second dielectric layers on the HSQ layer, forming a photoresist mask on the second dielectric layer and etching to form an opening in the second dielectric layer leaving the first dielectric layer exposed. The first dielectric layer protects the HSQ from degradation during subsequent stripping.

REFERENCES:
patent: 5780161 (1998-07-01), Hsu
patent: 5866945 (1999-02-01), Chen et al.

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