Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

1997-03-06

2000-04-18

Nelms, David

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

H01L 2128, H01L 2144

Patent

active

060514841

ABSTRACT:
A method for manufacturing a semiconductor device, comprises the steps of: depositing a first insulating film on a semiconductor substrate, and then, applying a photo resist to the first insulating film to align and develop the photo resist to form a first photo resist pattern; side-etching the first insulating film, by a predetermined size from an end portion of the first photo resist pattern, using the first photo resist pattern as a mask; depositing a second insulating film on the entire surface of the semiconductor substrate to form a gap above the semiconductor substrate between the first and second insulating films; removing the first photo resist pattern; and forming a gate electrode.

REFERENCES:
patent: 4729966 (1988-03-01), Koshino et al.
patent: 5021361 (1991-06-01), Kinoshita et al.
patent: 5432126 (1995-07-01), Oikawa
Chao et al., "Electron-Beam Fabrication Of GaAs Low-Noise MESFET's Using A New Trilayer Resist Technique", IEEE Transactions On Electron Devices, vol. ED-32(6):1042-1046, (1985).
Takenaka et al., "0.15 .mu.m T-shaped Gate Fabrication For GaAs MODFET Using Phase Shift Lithography", IEEE Transactions On Electron Devices, vol. 43(2):238-2244, (1996).
Tokushima et al., "0.25 .mu. Inner Sidewall-Assisted Super Self-Aligned Gate Heterojunction FET Fabricateed by All Dry-Etching Technology For Low Voltage Controlled LSIs", The Institute of Electronics, Information and Communication Engineers, pp. 9-16, (1993).

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