Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

1987-01-02

1987-11-17

Edlow, Martin H.

Fishing, trapping, and vermin destroying

357 70, 357 72, 437211, H01L 2348

Patent

active

047077247

ABSTRACT:
A nickel-alloy layer is formed on a lead frame made of a material which consists chiefly of copper as a base material, a pellet is then mounted, and a resin is applied thereto to form a package. Then, a copper layer or an alloy layer of copper and 0.05 to 0.2% by weight of zinc is formed on said nickel-containing alloy layer of the external lead portions. A solder layer is then formed on the copper layer or on the zinc-copper alloy layer that is formed on the external lead portions. With the thus formed semiconductor device, the resin exhibits increased adhesiveness relative to the tab and lead frame in the package. Therefore, peeling is prevented from occurring on the interface between the resin and the tab or lead frame. Further, no brittle intermetallic compound is formed by the heating in the metal layer such as the solder layer on the external lead portions. Accordingly, the metal layer is effectively prevented from peeling off.

REFERENCES:
patent: 4441118 (1984-04-01), Fister et al.

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