Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height
Reexamination Certificate
2005-12-27
2005-12-27
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With doping profile to adjust barrier height
C257S283000, C257S471000, C257S622000
Reexamination Certificate
active
06979874
ABSTRACT:
A plurality of p anode regions are formed at one surface of an n−substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a minimum impurity concentration at a portion near the ohmic junction region which enables ohmic contact. A cathode metallic electrode is formed at the other surface of the n−substrate with an n+cathode region interposed. Accordingly, a semiconductor device which has an improved withstand voltage and in which the reverse recovery current is reduced can be obtained.
REFERENCES:
patent: 4982260 (1991-01-01), Chang et al.
patent: 5109256 (1992-04-01), DeLong
patent: 5241195 (1993-08-01), Tu et al.
patent: 5278443 (1994-01-01), Mori et al.
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 5612567 (1997-03-01), Baliga
patent: 5637898 (1997-06-01), Baliga
patent: 5661312 (1997-08-01), Weitzel et al.
patent: 5679966 (1997-10-01), Baliga et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 6656774 (2003-12-01), Chow et al.
patent: 3-24767 (1991-02-01), None
patent: 4-321274 (1992-11-01), None
patent: 5-63184 (1993-03-01), None
patent: 5-226638 (1993-09-01), None
“Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact” Han-Soo Kim et al.,Jpn. J. Appl. Phys.,vol. 34 (1995), pp. 913-916.
“High-Speed Low-Loss p-n Diode Having a Channel Structure”, Y. Shimzu et al, IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp 1314-1319.
“High Current Characteristics of Asymmetrical p-I-n Diodes Having Low Forward Voltage Drops”, M. Naito et al, IEEE Transactions on Electron Devices, vol. Ed-23, No. 8, Aug. 1976, pp. 945-949.
“The Merged P-I-N Schottky (MPS) Rectifier: A High voltage, High-Speed Power Diode”, B. Jayant Baliga et al, IEDM 87, 1987, pp 658-661.
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
Nadav Ori
LandOfFree
Semiconductor device and method of manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3523026