Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

1988-07-25

1990-01-23

Clawson, Jr., Joseph E.

357 71, H01L 2554, H01L 21441

Patent

active

048962040

ABSTRACT:
An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

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patent: 4556897 (1985-12-01), Yorikane et al.
patent: 4561009 (1985-12-01), Yonezawa et al.
CRC Handbook of Chemistry and Physics, 66th Edition, 1985-1986, CRC Press, pp. B-221 and F-19.
S. P. Murarka, Silicides for VLSI Applications, Academic Press, 1983, p. 67.
Siemens Forschungs-und Entwicklungsberichte, vol. 13 (1984), No. 1, pp. 21-27.
NEC Research and Development, No. 25, Apr., 1972, pp. 74-80.
"Al-Ti and Al-Ti-Si Thin Alloy Films", Albertus G. Dirks et al., J. Appl. Phys., vol. 59, No. 6, Mar. 15, 1986, pp. 2010-2014.
"Stress Analysis of Passivation Film Crack for Plastic Molded LSI Caused by Thermal Stress", S. Okikawa et al., International Symposium for Testing and Failure Analysis 1983, pp. 275-280.

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